Design of 16bit 6t SRAM Using Different CMOS Technologies Using Cadence Virtuoso Tool

Abstract

Static Random Access Memory (SRAM) has been an important memory device in VLSI circuits. SRAM is used widely because of its huge storage capacity and can be accessed in less time with low power consumption. This paper presents design and implementation of 16Bit 6T SRAM using different CMOS technologies using Cadence Virtuoso tool. Due to the requirement of more storage, usage of 16-bit SRAM is convenient. The performance analysis of SRAM with respect to Power Dissipation and Average Delay is observed and compared.

Country : India

1 Rodda Srinivas

  1. Assistant Professor, Department of Electronics and Communication Engineering, Malla Reddy College of Engineering for Women, Hyderabad -500100, Telangana, India

IRJIET, Volume 2, Issue 7, September 2018 pp. 16-19

.

References

  1. Meenakshi, Analysis of Performance Metric of FinFET based SRAM cell, Rama University Kanpur, India, 2018.
  2. Jigyasa Panchal, Dr. Vishal Ramola, Design and Implementation of 6T SRAM using FinFET with LOW POWER application, Uttarakhand Technical University, Dehradun, India, 2017.
  3. Lourts Deepak, Likhitha Dhulipalla, Performance Comparison of CMOS and FinFET based SRAM for 22nm technology, M S Ramaiah School of Advanced Studies, Bangalore, India, 2013.
  4. S. Jim Hawkinson, Analysis and Performance comparison of CMOS and FinFET for VLSI applications, Muthayammal Engineering College, Rasipuram, Tamilnadu, India, 2013.
  5. Wei Lim, Cheng Siong Lim, Michael Loong Peng Tan, Huei Chaeng Chin, Performance Evolution of 14nm FinFET Based 6T SRAM cell functionality for DC and Transient circuit Analysis, University Teknologi Malaysia (UTM), 81310 Skudai, Johor, Malaysia, 2014.